- Basic Specifications - Capacity
- 4 TB
- Basic Specifications - Dimensions (WxDxH)
- 22.15 mm x 80.15 mm x 2.38 mm
- Basic Specifications - EAN
- 8806095575667
- Basic Specifications - Encryption Algorithm
- 256-bit AES
- Basic Specifications - Features
- Intelligent TurboWrite Technology, Samsung V-NAND TLC Technology, Device Sleep support, Host Memory Buffer (HMB), TRIM support, Auto Garbage Collection Algorithm, S.M.A.R.T., IEEE 1667
- Basic Specifications - Form Factor
- M.2 2280
- Basic Specifications - Hardware Encryption
- Yes
- Basic Specifications - Interface
- PCIe 5.0 x2 (NVMe)
- Basic Specifications - Manufacturer Warranty
- 5-year warranty
- Basic Specifications - Manufacturer's Part Number
- MZ-V9S4T0BW
- Basic Specifications - Model
- Samsung 990 EVO Plus MZ-V9S2T0
- Basic Specifications - NAND Flash Memory Type
- Triple-level cell (TLC)
- Basic Specifications - Product Description
- Samsung 990 EVO Plus MZ-V9S2T0 - SSD - 4 TB - PCIe 5.0 x2 (NVMe)
- Basic Specifications - Type
- Solid state drive - internal
- Basic Specifications - Weight
- 9 g
- Dimensions & Weight (Shipping) - Shipping Depth
- 2.29 cm
- Dimensions & Weight (Shipping) - Shipping Height
- 14.2 cm
- Dimensions & Weight (Shipping) - Shipping Width
- 9.9 cm
- Environmental Parameters - Humidity Range Operating
- 5 - 95% (non-condensing)
- Environmental Parameters - Max Operating Temperature
- 70 °C
- Environmental Parameters - Max Storage Temperature
- 85 °C
- Environmental Parameters - Min Operating Temperature
- 0 °C
- Environmental Parameters - Min Storage Temperature
- -40 °C
- Environmental Parameters - Shock Tolerance (non-operating)
- 1500 g @ 0.5 ms
- Environmental Parameters - Vibration Tolerance (non-operating)
- 20 g @ 20-2000 Hz
- Expansion & Connectivity - Compatible Bay
- M.2 2280
- General - Capacity
- 4 TB
- General - Depth
- 80.15 mm
- General - Device Type
- Solid state drive - internal
- General - Encryption Algorithm
- 256-bit AES
- General - Features
- Intelligent TurboWrite Technology, Samsung V-NAND TLC Technology, Device Sleep support, Host Memory Buffer (HMB), TRIM support, Auto Garbage Collection Algorithm, S.M.A.R.T., IEEE 1667
- General - Form Factor
- M.2 2280
- General - Hardware Encryption
- Yes
- General - Height
- 2.38 mm
- General - Interface
- PCIe 5.0 x2 (NVMe)
- General - NAND Flash Memory Type
- Triple-level cell (TLC)
- General - Weight
- 9 g
- General - Width
- 22.15 mm
- Manufacturer Warranty - Service & Support
- Limited warranty - 5 years / 2400 TBW
- Miscellaneous - Enclosure Material
- Nickel coating
- Performance - Internal Data Rate
- 7250 MBps (read) / 6300 MBps (write)
- Performance - Maximum 4KB Random Read
- 1050000 IOPS
- Performance - Maximum 4KB Random Write
- 1400000 IOPS
- Power - Power Consumption
- 5.5 Watt (read) ¦ 4.8 Watt (write) ¦ 60 mW (standby) ¦ 5 mW (sleep)
- Reliability - MTBF
- 1.500.000 hours
- Software & System Requirements - Software Included
- Samsung Magician Software